capable of 2.5v gate drive bv dss 30v small outline package r ds(on) 60m surface mount device i d 4a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w AP2328GN-HF parameter rating drain-source voltage 30 gate-source voltage + 12 continuous drain current 3 , v gs @ 4.5v 4 operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 4.5v 3 pulsed drain current 1 16 storage temperature range total power dissipation 1.38 -55 to 150 thermal data parameter d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. g d s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
AP2328GN-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =4a - - 55 m ? v gs =4.5v, i d =3a - - 60 m ? v gs =2.5v, i d =2a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.5 v g fs forward transconductance v ds =10v, i d =3a - 15 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =3a - 6 9.6 nc q gs gate-source charge v ds =15v - 0.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 2.5 - nc t d(on) turn-on delay time 2 v ds =15v - 5.3 - ns t r rise time i d =1a - 9.5 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 14.5 - ns t f fall time r d =15 -4- ns c iss input capacitance v gs =0v - 325 520 pf c oss output capacitance v ds =25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 2.1 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =3a, v gs =0 v , - 15 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. r ds(on) static drain-source on-resistance 2 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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